MAZK270D Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon planer type

Zener Diodes Composite Elements
MAZK270D
Silicon planer type
Constant voltage, constant current, waveform
cripper and surge absorption circuit
s Features
q Mini type package (5-pin)
q Four anode-common element wiring of MA3270
MA111
0.65±0.15
5
4
3
2.8
+0.2
-0.3
+0.25
1.5 -0.05
Unit : mm
0.65±0.15
1
2
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter
Symbol
Rating
Unit
Average forward current
IF(AV)
100 *¹
mA
Instanious forward current
IFRM
200 *¹
mA
Total power dissipation
Ptot*²
200 *¹
mW
Non-repetitive reverse power dissipation PZSM*³
15
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
– 55 to + 150
˚C
*¹ Working value in a single piece
*² With a printed-circuit board
*³ t=100µ s, T_j=150˚C
s Electrical Characteristics (Ta= 25˚C)*¹
0.1 to 0.3
0.4±0.2
1 : Cathode 1 4 : Anode 1, 2
2 : Cathode 2
Anode 3, 4
3 : Cathode 3 5 : Cathode 4
Mini Type Package (5-pin)
s Internal Connection
5
1
4
3
2
Parameter
Symbol
Condition
min
Forward voltage
Zener voltage
V_F
V_Z*²
I_F=10mA
I_Z= 2mA
25.10
Operating resistance
R_ZK
I_Z= 0.5mA
R_Z
I_Z= 2mA
Reverse current
I_R1
V_R= 19V
I_R2
V_R= 24.8V
Temperature coefficient of zener voltage
S_Z*³
I_Z= 2mA
21.4
Terminal capacitance
C_t
V_R= 0V, f=1MHz
Note 1. Test method : Depend on JIS C7031 testing
2. Rated input/output frequency : 5MHz
3. * ¹ : The V_Z value is for the temperature of 25˚C. In other cases, carry out the temperature compensation. ³⁰⁰
* ² : Guaranteeed at 20ms after power application
* ³ : T_j= 25 to 150˚C
250
typ
0.8
27.00
25
23.4
max
0.9
28.90
200
80
0.05
60
25.3
50
Unit
V
V
Ω
Ω
µA
µA
mV/˚C
pF
P_tot – Ta
With a printed-circuit board
s Marking
200
150
27A
100
50
0
0
50 100 150 200 250
Ambient temperature Ta (˚C)