MAZD024 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon planar type

Zener Diodes
MAZDxxx Series
Silicon planar type
For constant voltage, constant current,
waveform clipper and surge absorption circuit
0.60±0.05
1
Unit: mm
0.12^{+–00..0025}
■ Features
• Low noise type
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Repetitive peak forward current I_FRM
200
mA
Total power dissipation ^*
P_T
120
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg
−55 to +150
°C
Note) *: P_tot = 100 mW achieved with a printed circuit board
2
0.27^{+–00..0025}
5°
1: Anode
2: Cathode
SSSMini2-F2 Package
Marking Symbol
Refer to the list of the electrical
characteristics within part numbers
(Example) MAZD062: DF
■ Common Electrical Characteristics T_a = 25°C ± 3°C ^*1
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Zener voltage ^*2
Zener operating resistance
Reverse current
V_F
I_F = 10 mA
0.9 1.0
V
V_Z
I_Z
Specified value _{Refer to the list of the}
V
R_Z
I_Z
Specified value electrical characteristics
Ω
I_R
V_R
Specified value ^{within part numbers}
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. *1: The temperature must be controlled 25°C for V_Z mesurement.
V_Z value measured at other temperature must be adjusted to V_Z (25°C)
*2: VZ guaranteed 20 ms after current flow.
Publication date: September 2004
SKE00020AED
1