MAZC062D Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon planer type

Zener Diodes Composite Elements
MAZC062D
Silicon planer type
Constant voltage, constant current, waveform
cripper and surge absorption circuit
s Features
q Mini type package (3-pin)
q Low joint capacity zener diode (V_Z= 6.2V)
q Two anode-common element wiring
MA111
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit : mm
0.65±0.15
1
3
2
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter
Instanious forward current
Total power dissipation
Junction temperature
Storage temperature
* With a printed-circuit board
Symbol
Rating
Unit
I_FRM
200
mA
P_tot*
200
mW
T_j
150
˚C
T_stg
– 55 to + 150
˚C
0.1 to 0.3
0.4±0.2
1 : Cathode 1
2 : Cathode 2
3 : Anode 1
Anode 2
Mini Type Package (3-pin)
s Internal Connection
1
3
2
s Electrical Characteristics (Ta= 25˚C)*¹
Parameter
Forward voltage
Zener voltage
Operating resistance
Reverse current
Terminal capacitance
Symbol
VF
VZ*²
RZK
RZ
IR
Ct
Condition
I_F=10mA
I_Z= 5mA
I_Z= 0.5mA
I_Z= 5mA
V_R= 5.5V
V_R= 0V, f=1MHz
min
typ
0.9
5.9
8
Note 1. Rated input/output frequency : 5MHz
2. Test method : Depend on JIS C7031 testing
3. Electrostatic discharge is ±15kV
Test method : IEC-801(C=150pF, R=330Ω, Contact discharge : 10 times)
Test unit : ESS-200AX
4. * ¹ : The VZ value is for the temperature of 25˚C. In other cases, carry out the temperature compensation.
* ² : Guaranteeed at 20ms after power application
max
Unit
1.0
V
6.5
V
100
Ω
30
Ω
3
µA
pF
s Marking
6.2C