MAZ83600ML Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – MAZ8xxx Series (MA8000 Series) Silicon planar type

Zener Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MAZ8xxx Series (MA8000 Series)
Silicon planar type
Unit: mm
For stabilization of power supply
1.25±0.1
0.35±0.1
0.7±0.1
■ Features
• Extremely low noise voltage caused from the diode (2.4 V to
/ _{39V, 1/3 to 1/10 of our conventional MAZ3xxx series)}
• Extremely good rising performance (in the low-current range)
e _{• Easy-to-select the optimum diode because of their finely divided}
. _{zener-voltage ranks}
c _{ge • Guaranteed reliability, equivalent to that of conventional products}
n ^{d sta (Mini type package)}
le _{• Allowing to reduce the mounting area, thickness and weight}
yc _{substantially, compared with those of the conventional products}
a ^e lifec ^{• Allowing both reflow and flow mode of automatic soldering}
t _{• Allowing automatic mounting by an existing chip mounter}
n ^u_{Produc ■ Absolute Maximum Ratings Ta = 25°C}
te ^{tin four Parameter}
Symbol Rating
Unit
ing _type ^{n. Repetitive peak forward current}
w ^tio _{Power dissipation} *
in ^{n follo ance pe ed rma Junction temperature}
a ^{o ludes inten e ty typ info n/ Storage temperature}
I_FRM
200
mA
P_D
150
mW
T_j
150
°C
T_stg
−55 to +150
°C
c _ed ^inc _ed ^ma _tenanc ^{tinued type test .jp/e Note) *: PD = 150 mW achieved with a printed circuit board}
1
0 to 0.1
2
0.5±0.1
5˚
0.16^{+–00..016}
1: Anode
2: Cathode
EIAJ: SC-76
SMini2-F1 Package
Marking Symbol
Refer to the list of the electrical
characteristics within part numbers
(Example) MAZ8082: 8_2 or 8-2 or 8^2
M _is tinu ^{lan ain iscon ued out la nic.co ■ Common Electrical Characteristics Ta = 25°C ± 3°C *1}
on ^{p m d d ntin ab aso Parameter}
Symbol
Conditions
Min Typ Max Unit
isc ^{ne co RL an Forward voltage}
V_F
I_F = 10 mA
0.9 1.0
V
/D ^{pla dis g U n.p Zener voltage *2}
V_Z
I_Z Specified value
V
D _{ce win} ^ico _{Zener rise operating resistance}
R_ZK
I_Z Specified value
Refer to the list of the
Ω
tenan ^{follo .sem Zener operating resistance}
R_Z
I_Z Specified value
electrical characteristics
Ω
in ^{it w Reverse current}
I_R
V_R Specified value
within part numbers
µA
Ma e ^{vis ://ww Temperature coefficient of zener voltage *3}
S_Z
I_Z Specified value
mV/°C
as ttp ^{Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.}
Ple ^{h 2. Absolute frequency of input and output is 5 MHz.}
3. *1: The temperature must be controlled 25°C for V_Z mesurement.
V_Z value measured at other temperature must be adjusted to V_Z (25°C)
*2: VZ guaranteed 20 ms after current flow.
*3: Tj = 25°C to 150°C
Publication date: March 2004
Note) The part number in the parenthesis shows conventional part number.
SKE00007CED
1