MAZ8270GML Datasheet, PDF (1/8 Pages) Panasonic Semiconductor – MAZ8xxxG Series

Zener Diodes
This product complies with RoHS Directive (EU 2002/95/EC).
MAZ8xxxG Series
Silicon planar type
For stabilization of power supply
 Features
 Extremely low noise voltage caused from the diode (2.4 V to
39V, 1/3 to 1/10 of our conventional MAZ3xxx series)
 Extremely good rising performance (in the low-current range)
/  Easy-to-select the optimum diode because of their finely divided
zener-voltage ranks
e _{ Guaranteed reliability, equivalent to that of conventional products}
. _{(Mini type package)}
c _{tage  Allowing to reduce the mounting area, thickness and weight}
n ^{d s substantially, compared with those of the conventional products}
cle  Allowing both reflow and flow mode of automatic soldering
a ^{e cy  Allowing automatic mounting by an existing chip mounter}
n ^u _roduct ^life _{ Absolute Maximum Ratings Ta = 25°C}
te ^{tin rP Parameter}
Symbol Rating
Unit
g ^{fou e . Repetitive peak forward current}
I_FRM
200
mA
win ^{typ tion Total power dissipation *}
P_T
150
mW
in ^{n follo ance pe ed rma Junctiontemperature}
T_j
150
°C
a ^{o ludes inten e ty typ info n/ Storage temperature}
T_stg –55 to +150 °C
c _ed ^inc _ed ^ma _tenanc ^{tinued type test .jp/e Note) *: PT = 150 mW achieved with a printed circuit board.}
 Package
 Code
SMini2-F3
 Pin Name
1: Anode
2: Cathode
 Marking symbol
Refer to the list of the electrical
characteristics within part numbers
M _{is continu} ^{plan maiend discoonntinuedL aboutnlaasonic.co} _{ Common Electrical Characteristics Ta = 25°C±3°C}
is _lan ^{isc UR .pa Parameter}
Symbol
Conditions
e/D ^{p d ing icon Forward voltage}
D_{anc llow em Zener voltage *1}
inten ^{it fo w.s Zener rise operating resistance}
Ma e ^{vis ://ww Zener operating resistance}
as ttp ^{Reverse current}
Ple ^{h Temperature coefficient of zener voltage *2}
V_F
I_F = 10 mA
V_Z
I_Z
Specified value
R_ZK
I_Z
Specified value
R_Z
I_Z
Specified value
I_R
V_R
Specified value
S_Z
I_Z
Specified value
Min Typ Max
0.9 1.0
Refer to the list of the
electrical characteristics
within part numbers
Unit
V
V
W
W
mA
mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. The temperature must be controlled 25°C for V_Z measurement.
V_Z value measured at other temperature must be adjusted to V_Z (25°C)
4. *1: V_Z guaranteed 20 ms after current flow.
*2: Tj = 25°C to 150°C
Publication date: May 2009
SKE00032DED
1