MAZ8000 Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon planar type

Zener Diodes
MAZ8000 Series
Silicon planar type
For stabilization of power supply
I Features
• Extremely low noise voltage caused from the diode (2.4V to 39V,
1/3 to 1/10 of our conventional MAZ3000 series)
• Extremely good rising performance (in the low-current range)
• Easy-to-select the optimum diode because of their finely divided
zener-voltage ranks
• Guaranteed reliability, equivalent to that of conventional products
(Mini type package)
• Allowing to reduce the mounting area, thickness and weight sub-
stantially, compared with those of the conventional products
• Allowing both reflow and flow mode of automatic soldering
• Allowing automatic mounting by an existing chip mounter
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Repetitive peak forward current
Total power dissipation^*
Junction temperature
Storage temperature
I_FRM
200
mA
P_tot
150
mW
T_j
150
°C
T_stg
−55 to +150
°C
Note) * : With a printed-circuit board
Unit : mm
K
A
2
1
0.4 ± 0.1
1.7 ± 0.1
2.5 ± 0.2
0.4 ± 0.1
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol
Refer to the list of the electrical
characteristics within part numbers
(Example) MAZ8082-H : 8^2
Note) L/M/H marked products will be sup-
plied unless other wise specified
I Common Electrical Characteristics T_a = 25°C^*1
Parameter
Symbol
Conditions
Min Typ Max
Forward voltage
V_F
Zener voltage^*2
V_Z
Operating resistance
R_ZK
R_Z
Reverse current
I_R
Temperature coefficient of zener voltage^*3
S_Z
I_F = 10 mA
I_Z ·················· Specified value
I_Z ·················· Specified value
I_Z ·················· Specified value
V_R ··············· Specified value
I_Z ·················· Specified value
0.9 1.0
Refer to the list of the
electrical characteristics
within part numbers
Note) 1ɽRated input/output frequency: 5 MHz
2ɽ*1 : The V_Z value is for the temperature of 25°C. In other cases, carry out the temperature compensation.
*2 : Guaranteed at 20 ms after power application.
*3 : T_j = 25°C to 150°C
Unit
V
V
Ω
Ω
µA
mV/°C
1