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MAZ7051 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Zener Diodes Silicon planar type
Zener Diodes
MAZ7xxx Series (MA7xxx Series)
Silicon planar type
For stabilization of power supply
Unit: mm
■ Features
• Large power dissipation PD : 800 mW
• Allowing to supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Repetitive peak forward current
IFRM
200
mA
Power dissipation *1
PD
800
mW
Non-repetitive reverse surge *2 PZSM
60
W
power dissipation
Junction temperature
Storage temperature
Tj
200
°C
Tstg
−55 to +200
°C
Note) *1: PD = 800 mW achieved with a printed circuit board
*2: t = 100 µs, Tj = 150°C
27 min.
Colored band
indicatesVZ
classification
4.0±0.5
27 min.
2.6+–00..24
Cathode
1st Band
2nd Band
3rd Band
Anode
DO-41-A2 Package
■ Common Electrical Characteristics Ta = 25°C ± 3°C *1
Parameter
Forward voltage
Zener voltage *2
Zener operating resistance
Reverse current
Temperature coefficient of zener voltage *3
Terminal capacitance
Symbol
VF
VZ
RZ
IR
SZ
Ct
Conditions
IF = 200 mA
IZ Specified value
IZ Specified value
VR Specified value
IZ Specified value
VR = 0 V, f = 1 MHz
Specified value
Min Typ Max
1.0
Refer to the list of the
electrical characteristics
within part numbers
Unit
V
V
Ω
µA
mV/°C
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. *1: The temperature must be controlled 25°C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
*2: VZ guaranteed 20 ms after current flow.
*3: Tj = 25°C to 150°C
Publication date: November 2004
Note) The part number in the parenthesis shows conventional part number.
SKE00006DED
1