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MAZ4020 Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Zener Diodes Silicon planar type
Zener Diodes
MAZ4xxx Series (MA4xxx Series)
Silicon planar type
For stabilization of power supply
Unit: mm
■ Features
• High reliability, achieved by the DHD structure
• Allowing to insert to a 5 mm pitch hole
• Finely divided zener-voltage rank
• Sharp rising performance
• Wide voltage range: Zener voltage VZ = 2.0 V to 39.0 V
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Forward current (Average)
IF(AV)
250
mA
Repetitive peak forward current
IFRM
250
mA
Power dissipation *1
PD
370
mW
Non-repetitive reverse surge *2 PZSM
30
W
power dissipation
Junction temperature
Storage temperature
Tj
200
°C
Tstg
−65 to +200
°C
Note) *1: PD = 370 mW achieved with a printed circuit board
*2: t = 100 µs, Tj = 150°C
13 min.
Colored band
indicatesVz
classification
2.7±0.15
2.5±0.1
13 min.
φ1.55±0.2
Cathode
1st Band
2nd Band
3rd Band
Anode
DO-34-A2 Package
■ Common Electrical Characteristics Ta = 25°C ± 3°C *1
Parameter
Forward voltage
Zener voltage *2
Zener rise operating resistance
Zener operating resistance
Reverse current
Temperature coefficient of zener voltage *3
Terminal capacitance
Symbol
VF
VZ
RZK
RZ
IR1
IR2
SZ
Ct
Conditions
IF = 10 mA
IZ Specified value
IZ Specified value
IZ Specified value
VR Specified value
VR Specified value
IZ Specified value
VR = 0 V, f = 1 MHz
Specified value
Min Typ Max
0.8 0.9
Refer to the list of the
electrical characteristics
within part numbers
Unit
V
V
Ω
Ω
µA
mV/°C
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 50 MHz.
3. *1: The temperature must be controlled 25°C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
*2: VZ guaranteed 20 ms after current flow.
*3: Tj = 25°C to 150°C
Publication date: March 2004
Note) The part number in the parenthesis shows conventional part number.
SKE00004DED
1