MAZ2XXX Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – SILICON PLANAR TYPE

Zener Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MAZ2xxx Series (MA2xxx Series)
Silicon planar type
For stabilization of power supply
Unit: mm
■ Features
• High reliability, achieved by the combination the planar type
and the glass seal
• Large power dissipation P_D
• Wide voltage range: Zener voltage V_Z = 5.1 V to 56.0 V
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Repetitive peak forward current
I_FRM
400
mA
Power dissipation ^*1
P_D
1.0
W
Non-repetitive reverse surge
P_ZSM
75
W
power dissipation ^*2
Junction temperature
Storage temperature
T_j
200
°C
T_stg
−55 to +200
°C
Note) _*1: P_D = 1.0 W achieved with a printed circuit board
*2: ^{t = 100 µs, T}j ^{= 150°C}
27 min.
Colored band
indicatesVz
classification
4.0±0.5
27 min.
2.6^{+–00..24}
Cathode
1st Band
2nd Band
3rd Band
Anode
DO-41-A1 Package
■ Common Electrical Characteristics T_a = 25°C ± 3°C ^*1
Parameter
Forward voltage
Zener voltage ^*2
Zener operating resistance
Reverse current
Temperature coefficient of zener voltage ^*3
Terminal capacitance
Symbol
V_F
V_Z
R_Z
I_R
S_Z
C_t
Conditions
I_F = 200 mA
I_Z Specified value
I_Z Specified value
V_R Specified value
I_Z Specified value
V_R = 0 V, f = 1 MHz
Specified value
Min Typ Max
1.0
Refer to the list of the
electrical characteristics
within part numbers
Unit
V
V
Ω
µA
mV/°C
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. *1: The temperature must be controlled 25°C for V_Z mesurement.
V_Z value measured at other temperature must be adjusted to V_Z (25°C)
*2: VZ guaranteed 20 ms after current flow.
*3: Tj = 25°C to 150°C
Publication date: March 2004
Note) The part number in the parenthesis shows conventional part number.
SKE00002CED
1