MAU2D30 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type For high speed switching circuits

This product complies with RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MAU2D30
Silicon epitaxial planar type
For high speed switching circuits
Unit: mm
 Features
 Optimum for high-density mounting
 Extremely low reverse current I_R
 Short reverse recovery time t_rr
/ _{ Absolute Maximum Ratings Ta = 25°C}
e _Parameter
Symbol Rating
Unit
c _ge. Reverse voltage
V_R
30
V
n ^{d sta Repetitive peak reverse voltage}
V_RRM
30
V
cle _{Forward current (Average)}
I_F(AV)
100
mA
a ^e lifecy ^{Peak forward current}
I_FM
200
mA
ct Non-repetitive peak forward surge current ^*
I_FSM
1
A
n ^u _rodu Junction temperature
T_j
125
°C
te ^{tin r P Storagetemperature}
T_stg –55 to +125 °C
fou Note) _*: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
0.60±0.05
1
0.13^{+–00..0025}
2
0.2^{+–00..0025}
5°
1: Anode
2: Cathode
USSMini2-F1 Package
Marking Symbol: 1D
in ^{n followinagnce typpee ed rmation.  Electrical Characteristics Ta = 25°C±3°C}
a ^{o ludes inten ce ty d typ t info /en/ Parameter}
Symbol
Conditions
Min Typ Max Unit
c _ued ^{incned maintenanontinued type} _t ^lates .co.jp ^{Forward voltage}
M _isiscontin ^{pla maned disccontinuReL abouanasonic} _{Reversecurrent}
V_F1
I_F = 10 mA
V_F2
I_F = 100 mA
I_R1
V_R = 10 V
I_R2
V_R = 30 V
0.38 0.44
V
0.51 0.58
V
0.3
µA
2
µA
/D ^{pla dis g U n.p Terminal capacitance}
C_t
V_R = 0 V, f = 1 MHz
9
pF
D_{tenance followin.semico Reverse recovery time *}
t_rr
I_F = I_R = 10 mA, I_rr = 10 mA,
R_L = 100 Ω
1
ns
in ^{it w Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.}
Ma e ^{vis ://ww 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage}
as ttp ^{of current from the operating equipment.}
le ^{h 3. Absolute frequency of input and output is 250 MHz}
P _{4. *: trr measurement circuit}
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
t_r
t_p
10%
t
I_F
t_rr
t
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 10 mA
I_F = I_R = 10 mA
R_L = 100 Ω
Publication date: September 2006
SKH00158AED
1