MAS3795 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MAS3795
Silicon epitaxial planar type
For high-speed switching circuits
■ Features
• High-density mounting is possible
• Optimum for high frequency rectification because of its short
reverse recovery time (t_rr)
• Low forward voltage V_F optimum for low voltage rectification
V_F = < 0.3 V (at I_F = 1 mA)
• SSS-Mini type 3-pin package
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Peak forward current
Junction temperature
Storage temperature
V_R
30
V
V_RM
30
V
I_F
30
mA
I_FM
150
mA
T_j
125
°C
T_stg
−55 to +125
°C
0.33^{+–00..0025}
3
0.23^{+–00..0025}
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5°
Unit: mm
0.10^{+–00..0025}
1: Anode
2: N.C.
3: Cathode
SSSMini3-F1 Package
Marking Symbol: M2
Internal Connection
3
■ Electrical Characteristics T_a = 25°C ± 3°C
1
2
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time ^*
Detection efficiency
I_R
V_R = 30 V
V_F1
I_F = 1 mA
V_F2
I_F = 30 mA
C_t
V_R = 1 V, f = 1 MHz
t_rr
I_F = I_R = 10 mA
I_rr = 1 mA, R_L = 100 Ω
η
V_in = 3 V_(peak) , f = 30 MHz
R_L = 3.9 kΩ, C_L = 10 pF
30
µA
0.3
V
1.0
1.5
pF
1.0
ns
65
%
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
ɹ 2. Rated input/output frequency: 2 GHz 3. _*: t_rr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
t_r
t_p
10%
t
I_F
t_rr
t
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 1 mA
I_F = 10 mA
I_R = 10 mA
R_L = 100 Ω
Publication date: June 2002
SKH00117AED
1