MAS3132E Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Switching Diodes

Switching Diodes
MAS3132E
Silicon epitaxial planar type
For high-speed switching circuits
■ Features
• Two elements are contained in one package, allowing high-
density mounting
• Short reverse recovery time t_rr
• Small terminal capacitance C_t
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
V_R
80
V
Maximum peak reverse voltage V_RM
80
V
Forward current
Single
I_F
100
mA
Double
150
Peak forward current Single
I_FM
225
mA
Double
340
Non-repetitive peak Single
I_FSM
500
mA
forward surge current ^* Double
750
Junction temperature
Storage temperature
Note) _*: t = 1 s
T_j
150
°C
T_stg
−55 to +150
°C
0.33^{+–00..0025}
3
0.23^{+–00..0025}
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5˚
Unit: mm
0.10^{+–00..0025}
1: Anode 1
2: Anode 2
3: Cathode 1, 2
SSSMini3-F1 Package
Marking Symbol: MU
Internal Connection
3
1
2
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
Reverse recovery time ^*
V_F
I_F = 100 mA
V_R
I_R = 100 µA
I_R
V_R = 75 V
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = 10 mA, V_R = 6 V
I_rr = 0.1 I_R , R_L = 100 Ω
1.2
V
80
V
100 nA
2
pF
3
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. _*: t_rr measurement circuit
Bias Application Unit N-50BU
Input Pulse
Output Pulse
t_r
t_p
10%
t
I_F
t_rr
t
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 0.1 I_R
I_F = 10 mA
V_R = 6 V
R_L = 100 Ω
Publication date: November 2003
SKF00065BED
1