MA7D56 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type (cathode common)

Schottky Barrier Diodes (SBD)
MA3D756 (MA7D56)
Silicon epitaxial planar type (cathode common)
For switching mode power supply
I Features
• Low forward voltage V_F
• High dielectric breakdown voltage: > 5 kV
• Easy-to-mount, due to its V cut lead end
• TO-220D-A1 package
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Repetitive peak reverse-voltage
V_RRM
60
V
Average forward current
I_F(AV)
10
A
Non-repetitive peak forward-
I_FSM
120
A
surge-current ^*
Junction temperature
Storage temperature
T_j
−40 to +125
°C
T_stg
−40 to +125
°C
Note) _*: Half sine wave; 10 ms/cycle
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1 : Anode
2 : Cathode
3 : Anode
TO-220D-A1 Package
Internal Connection
1
2
3
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
I_R
Forward voltage (DC)
V_F
High voltage rectification
R_th(j-c)
Note) Rated input/output frequency: 150 MHz
V_R = 60 V
I_F = 5 A
Smoothed current (between junction and case)
3
mA
0.58
V
3 °C/W
Publication date: August 2001
Note) The part number in the parenthesis shows conventional part number.
SKH00046AED
1