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MA715 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type | |||
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Schottky Barrier Diodes (SBD)
MA3X715 (MA715)
Silicon epitaxial planar type
For high frequency rectification
s Features
⢠Low forward voltage VF
⢠Optimum for high frequency rectification because of its short
reverse recovery time (trr)
⢠Mini type 3-pin package
s Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
VR
30
V
Peak reverse voltage
VRM
30
V
Forward current (DC) Single
IF
30
mA
Series
20
Peak forward
Single
IFM
150
mA
current
Series
110
Junction temperature
Storage temperature
Tj
125
°C
Tstg
â55 to +125
°C
0.40+â00..0150
3
Unit: mm
0.16+â00..0160
1
2
(0.95) (0.95)
1.9±0.1
2.90+â00..0250
10Ë
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: M2Y
Internal Connection
3
s Electrical Characteristics Ta = 25°C ± 3°C
1
2
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time *
Detection efficiency
IR
VR = 30 V
VF1
IF = 1 mA
VF2
IF = 30 mA
Ct
VR = 1 V, f = 1 MHz
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 â¦
η
Vin = 3 V(peak) , f = 30 MHz
RL = 3.9 kâ¦, CL = 10 pF
30
µA
0.3
V
1.0
1.5
pF
1.0
ns
65
%
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
ɹ 2. Rated input/output frequency: 2 GHz
Bias Application Unit N-50BU
3. *: trr measuring instrument
Input Pulse
Output Pulse
tr
tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 â¦
Wave Form Analyzer
(SAS-8130)
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 â¦
Ri = 50 â¦
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2002
SKH00075BED
1
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