MA6X129 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Rectifier Diodes
MA6X129 (MA129)
Silicon epitaxial planar type
For small power current rectification
I Features
• Three isolated elements contained in one package, allowing high-
density mounting
• Allowing high voltage rectification
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V_R
200
V
Peak reverse voltage
V_RM
200
V
Output current Single
I_O
100
mA
Triple
200
Repetitive peak Single
I_FRM
200
mA
forward current Triple
600
Non-repetitive peak Single
I_FSM
350
mA
forward surge current^* _Triple
1 000
Junction temperature
Storage temperature
T_j
150
°C
T_stg
−55 to +150
°C
Note) * : t = l s
2.90⁺_{–00..0250}
1.9±0.1
(0.95) (0.95)
4
5
6
32
1
0.30⁺_{–00..0150}
0.50⁺_{–00..0150}
10°
Unit : mm
0.16⁺_{–00..0160}
1: Cathode 1 4: Anode 1
2: Cathode 2 5: Anode 2
3: Cathode 3 6: Anode 3
Mini6-G1 Package
Marking Symbol: M4F
Internal Connection
6
1
5
2
4
3
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Reverse current (DC)
I_R
Forward voltage (DC)
V_F
Terminal capacitance
C_t
Note) Rated input/output frequency: 3 MHz
Conditions
V_R = 200 V
I_F = 200 mA
V_R = 0 V, f = 1 MHz
Min Typ Max Unit
0.2
µA
1.2
V
4.5
pF
Note) The part number in the parenthesis shows conventional part number.
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