MA6X078 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Band Switching Diodes
MA6X078 (MA78)
Silicon epitaxial planar type
For band switching
I Features
• Non connected three elements incorporated in one package
• Low forward dynamic resistance r_f
• Less voltage dependence of diode capacitance C_D
• Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
2.90⁺_{–00..0250}
1.9±0.1
(0.95) (0.95)
4
5
6
32
1
0.30⁺_{–00..0150}
0.50⁺_{–00..0150}
10°
Unit : mm
0.16⁺_{–00..0160}
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Forward current (DC)
Operating ambient temperature^*
Storage temperature
V_R
35
V
I_F
100
mA
T_opr
−25 to +85
°C
T_stg
−55 to +150
°C
Note) * : Maximum ambient temperature during operation
1 : Cathode 1 4 : Anode 3
2 : Cathode 2 5 : Anode 2
3 : Cathode 3 6 : Anode 1
Mini6-G1 Package
Marking Symbol: M2L
Internal Connection
6
1
5
2
4
3
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Diode capacitance
Forward dynamic resistance^*
I_R
V_R = 33 V
V_F
I_F = 100 mA
C_D
V_R = 6 V, f = 1 MHz
r_f
I_F = 2 mA, f = 100 MHz
0.01 100 nA
0.92 1
V
0.9 1.2
pF
0.65 0.85
Ω
Note) 1. Each characteristic is a standard for individual diodes
2. Rated input/output frequency: 100 MHz
3. * : r_f measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
Note) The part number in the parenthesis shows conventional part number.
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