MA6S121 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Switching Diodes
MA6S121
Silicon epitaxial planar type
For switching circuit
I Features
• Small S-mini type 6-pin package
• Three isolated elements contained in one package, allowing high-
density mounting
• Flat lead type, resulting in improved mounting efficiency and
solderability with the high-speed mounting machine
• Short reverse recovery time t_rr
• Small terminal capacitance, C_t
Unit : mm
2.1 ± 0.1
1.25 ± 0.1
1
6
2
5
3
4
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V_R
80
V
Peak reverse voltage
V_RM
80
V
Average forward current^*1
I_F(AV)
100
mA
Peak forward current^*1
I_FM
225
mA
Non-repetitive peak forward
I_FSM
500
mA
surge current^*1,2
Junction temperature
Storage temperature
T_j
150
°C
T_stg
−55 to +150
°C
Note) *1 : Value for single diode
*2 : t = 1 s
1 : Anode 1 4 : Cathode 3
2 : Anode 2 5 : Cathode 2
3 : Anode 3 6 : Cathode 1
S-Mini Type Package (6-pin)
Marking Symbol: M2D
Internal Connection
1
6
2
5
3
4
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Reverse current (DC)
I_R
Forward voltage (DC)
V_F
Reverse voltage (DC)
V_R
Terminal capacitance
C_t
Reverse recovery time^*
t_rr
Note) 1. Rated input/output frequency: 100 MHz
2. * : t_rr measuring circuit
Conditions
V_R = 75 V
I_F = 100 mA
I_R = 100 µA
V_R = 0 V, f = 1 MHz
I_F = 10 mA, V_R = 6 V
I_rr = 0.1 · I_R, R_L = 100 Ω
Min Typ Max Unit
0.1
µA
1.2
V
80
V
2
pF
3
ns
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 0.1 · I_R
I_F = 10 mA
V_R = 6 V
R_L = 100 Ω
1