MA650 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon planer type (cathode common)

Fast Recovery Diodes (FRD)
MA650
Silicon planer type (cathode common)
For switching
s Features
q High reverse voltage V_R
q Low forward voltage V_F
q Fast reverse recovery time t_rr
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
V_RRM
200
V
Non-repetitive peak reverse voltage VRSM
200
V
Average forward current
I_F(AV)
10
A
Non-repetitive peak forward surge current
I_FSM*
60
A
Junction temperature
T_j
– 40 to +150
˚C
Storage temperature
Tstg
– 40 to +150
˚C
* Sine half wave : 10ms/cycle
MA111
10.0±0.2
5.5±0.2
Unit : mm
4.2±0.2
2.7±0.2
ø3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
-0.1
2.54±0.25
5.08±0.5
123
1 : Anode
2 : Cathode
(common)
3 : Anode
TO-220F(a) (TO-220 Full-Pack Package)
s Internal Connection
123
s Electrical Characteristics (Ta= 25˚C)
Parameter
Symbol
Repetitive peak reverse current
I_RRM1
I_RRM2
Forward voltage (DC)
Reverse recovery time
Thermal resistance
V_F
t_rr*
R_th(j-c)
R_th(j-a)
Note 1. Rated input/output frequency : 10MHz
2. * trr measuring circuit
Condition
VRRM= 200V, TC= 25˚C
VRRM= 200V, Tj=150˚C
IF= 5A, TC= 25˚C
IF=1A, IR=1A
Flat direct current between junction and case
50Ω
50Ω
IF
D.U.T
IR
5.5Ω
min
typ
max
Unit
100
µA
6
mA
1
V
100
ns
3
˚C/W
63
˚C/W
trr
0.1 × IR