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MA4ZD03 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Schottky Barrier Diodes (SBD) Silicon epitaxial planar type
Schottky Barrier Diodes (SBD)
MA4ZD03
Silicon epitaxial planar type
For high speed switching
For small type power supply
For DC/DC converter
I Features
• Two isolated elements are contained in one package, allowing
high-density mounting
• IF = 100 mA rectification is possible
• Optimum for high frequency rectification because of its short
reverse recovery time (trr)
• S-Mini type 4-pin package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Forward current (DC) Single
IF
Double
100
mA
75
Peak forward
Single
IFM
300
mA
current
Double
225
Non-repetitive peak Single
IFSM
1
A
forward-surge-current * Double
0.75
Reverse voltage (DC)
VR
45
V
Repetitive peak reverse-voltage
VRRM
45
V
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
2.1±0.1
1.3±0.1
4
3
12
0.3±0.05
5°
Unit: mm
0.7±0.1
0.16+–00..016
1 : Anode 1
2 : Anode 2
EIAJ : SC-82
3 : Cathode 2
4 : Cathode 1
SMini4-F1 Package
Marking Symboɿl M5A
Internal Connection
4
3
1
2
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time *
IR
VR = 40 V
VF
IF = 100 mA
Ct
VR = 0 V, f = 1 MHz
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
5
µA
0.54 0.60 V
12 18
pF
1.2
ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
ɹ 2. Rated input/output frequency: 250 MHz 3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr
tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Publication date: August 2001
SKH00110AED
1