MA4X194 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Switching Diodes
MA4X194
Silicon epitaxial planar type
For switching circuits
I Features
• Short reverse recovery time t_rr
• Two isolated elements contained in one package, allowing high-
density mounting
0.65 ± 0.15
+ 0.2
2.8 − 0.3
1.5
+
−
0.25
0.05
Unit : mm
0.65 ± 0.15
0.5 R
4
1
2
3
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Repetitive peak reverse voltage
Average forward
current
Single
Double
Repetitive peak
forward current
Single
Double
Non-repetitive peak Single
forward surge current^* _Double
Power dissipation
Junction temperature
Storage temperature
V_R
V_RRM
I_F(AV)
I_F(AV)
I_FRM
I_FRM
I_FSM
I_FSM
P_D
T_j
T_stg
40
40
100
75
225
170
500
375
150
150
−55 to +150
Note) * : t = 1 s
Unit
V
V
mA
mA/Unit
mA
mA/Unit
mA
mA/Unit
mW
°C
°C
0.1 to 0.3
0.4 ± 0.2
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
Mini Type Package (4-pin)
Marking Symbol: M1F
Internal Connection
4
1
3
2
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
I_R1
V_R = 40 V
I_R2
V_R = 35 V, T_a = 150°C
Forward voltage (DC)
V_F
I_F = 100 mA
Terminal capacitance
Forward dynamic resistance
Reverse recovery time^*3
C_t
V_R = 6 V, f = 1 MHz
r_f*1
I_F = 3 mA, f = 30 MHz
r_f*2
I_F = 3 mA, f = 30 MHz
t_rr
I_F = 10 mA, V_R = 6 V
I_rr = 0.1 · I_R, R_L = 100 Ω
Note) *1 : r_f measuring instrument: Nihon Koshuha Model TDC-121A
*2 : r_f measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER
*3 : t_rr measuring circuit
10
nA
10
µA
0.98 1.2
V
1.0 2.0
pF
1.7 2.5
Ω
3.6
100
ns
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 0.1 · I_R
I_F = 10 mA
V_R = 6 V
R_L = 100 Ω
1