MA4X193 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Switching Diodes
MA4X193
Silicon epitaxial planar type
Silicon epitaxial planar type
I Features
• Mini type 4-pin package, contained four elements
• Short reverse recovery time t_rr
• Bridge diodes for surface mounting
• Anode common + cathode common composite product
0.65 ± 0.15
+ 0.2
2.8 − 0.3
1.5
+
−
0.25
0.05
Unit : mm
0.65 ± 0.15
0.5 R
4
1
2
3
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V_R
80
V
Repetitive peak reverse voltage V_RRM
80
V
Average forward current
I_F(AV)
70
mA
Repetitive peak forward current I_FRM
150
mA
Non-repetitive peak forward
I_FSM
250
mA
surge current^*
Junction temperature
Storage temperature
T_j
150
°C
T_stg
−55 to +150
°C
Note) * : t = 1 s
0.1 to 0.3
0.4 ± 0.2
1: Cathode 1
3: Anode 3
Anode 2
Cathode 4
2: Cathode 2, 3 4: Anode 1, 4
Mini Type Package (4-pin)
Marking Symbol: M2Z
Internal Connection
4
1
3
2
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Reverse current (DC)
I_R
Forward voltage (DC)
V_F
Reverse voltage (DC)
V_R
Terminal capacitance
C_t
Reverse recovery time^*
t_rr
Note) 1. Rated input/output frequency: 100 MHz
2. * : t_rr measuring circuit
Conditions
V_R = 75 V
I_F = 70 mA
I_R = 100 µA
V_R = 0 V, f = 1 MHz
I_F = 10 mA, V_R = 6 V
I_rr = 0.1 · I_R, R_L = 100 Ω
Min Typ Max Unit
100 nA
1.2
V
80
V
15
pF
10
ns
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 0.1 · I_R
I_F = 10 mA
V_R = 6 V
R_L = 100 Ω
1