MA4X160A Datasheet, PDF (1/2 Pages) –

Switching Diodes
MA4X160A
Silicon epitaxial planar type
For switching circuits
I Features
• Two isolated elements contained in one package, allowing high-
density mounting
• Centrosymmetrical wiring, allowing to free from the taping
direction
• Short reverse recovery time t_rr
• Small terminal capacitance, C_t
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Repetitive peak reverse voltage
Reverse voltage Single
(DC)
Double
Repetitive peak
forward current
Single
Double
Non-repetitive peak Single
forward surge current^* Double
Junction temperature
Storage temperature
V_R
V_RRM
I_F(AV)
I_F(AV)
I_FRM
I_FRM
I_FSM
I_FSM
T_j
T_stg
80
80
100
75
225
170
500
375
150
−55 to +150
Note) * : t = 1 s
Unit
V
V
mA
mA/Unit
mA
mA/Unit
mA
mA/Unit
°C
°C
0.65 ± 0.15
2.8
+
−
0.2
0.3
1.5
+
−
0.25
0.05
Unit : mm
0.65 ± 0.15
0.5 R
4
1
2
3
0.1 to 0.3
0.4 ± 0.2
1 : Cathode 1
2 : Anode 2
3 : Cathode 2
4 : Anode 1
Mini Type Package (4-pin)
Marking Symbol: M1E
Internal Connection
4
1
3
2
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Reverse current (DC)
I_R
Forward voltage (DC)
V_F
Reverse voltage (DC)
V_R
Terminal capacitance
C_t
Reverse recovery time^*
t_rr
Note) 1. Rated input/output frequency: 100 MHz
2. * : t_rr measuring circuit
Conditions
V_R = 75 V
I_F = 100 mA
I_R = 100 µA
V_R = 0 V, f = 1 MHz
I_F = 10 mA, V_R = 6 V
I_rr = 0.1 · I_R, R_L = 100 Ω
Min Typ Max Unit
0.1
µA
0.95 1.2
V
80
V
0.9
2
pF
3
ns
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 0.1 · I_R
I_F = 10 mA
V_R = 6 V
R_L = 100 Ω
1