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MA4S713 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type
Schottky Barrier Diodes (SBD)
MA4S713
Silicon epitaxial planar type
For switching circuits
For wave detection circuit
I Features
• Small S-mini type 4-pin package
• Two isolated elements contained in one package, allowing high-
density mounting
• Flat lead type package, resulting in promotion of the actual mounting
ratio and solderability with a high-speed mounter
• Optimum for low-voltage rectification because of its low forward rise
voltage (VF)
• Optimum for high-frequency rectification because of its short reverse
recovery time (trr)
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
VR
30
V
Peak forward current
VRM
30
V
Peak forward
Single
IFM
150
mA
current
Double*ɹ
110
Forward current Single
IF
(DC)
Double*ɹ
30
mA
20
Junction temperature
Storage temperature
Tj
125
°C
Tstg
−55 to +125
°C
Note) * : Value per chip
2.1 ± 0.1
1.25 ± 0.1
Unit : mm
1
4
2
3
1 : Anode 1
2 : Anode 2
3 : Cathode 2
4 : Cathode 1
S-Mini Type Package (4-pin)
Marking Symbol: M1N
Internal Connection
1
4
2
3
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC)
IR
Forward voltage (DC)
VF1
VF2
Terminal capacitance
Ct
Reverse recovery time*
trr
Detection efficiency
η
Conditions
VR = 30 V
IF = 1 mA
IF = 30 mA
VR = 1 V, f = 1 MHz
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
Vin = 3 V(peak), f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
Min Typ Max Unit
1
µA
0.4
V
1
V
1.5
pF
1
ns
65
%
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
ɹ 2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
tr
tp
t
10%
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF
trr
t
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
1
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