MA3ZD12 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA3ZD12
Silicon epitaxial planar type
For high-speed switching circuits
I Features
• S-mini type 3-pin package
• Allowing to rectify under (I_F(AV) = 700 mA) condition
• Low forward rise voltage V_F (V_F < 0.45 V)
• Allowing high-density mounting
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V_R
20
V
Repetitive peak reverse voltage V_RRM
25
V
Average forward current^*2
I_F(AV)
700
mA
Non-repetitive peak forward
I_FSM
2
A
surge current^*1
Junction temperature
T_j
125
°C
Storage temperature
T_stg
−55 to +125
°C
Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
*2 : Mounted on a alumina printed circuit board
Unit : mm
0.425
2.1 ± 0.1
1.25 ± 0.1
0.425
1
3
2
1 : Anode
2 : NC
3 : Cathode
Flat S-Mini Type Package (3-pin)
Marking Symbol: M5E
Internal Connection
1
3
2
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
I_R
V_R = 20 V
V_F
I_F = 700 mA
C_t
V_R = 0 V, f = 1 MHz
200 µA
0.45
V
100
pF
Reverse recovery time
t_rr
I_F = I_R = 100 mA
I_rr = 10 mA, R_L = 100 Ω
7
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
1