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MA3Z793 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type
Schottky Barrier Diodes (SBD)
MA3Z793
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
0.425
2.1 ± 0.1
1.25 ± 0.1
Unit : mm
0.425
I Features
• Two MA3Z792s diodes (series connection) are contained in the S-
mini type 3-pin package
• Allowing to rectify under (IF(AV) = 100 mA) condition
• Optimum for high-frequency rectification because of its short
reverse recovery time (trr)
• Low VF (forward rise voltage), with high rectification efficiency
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
VR
30
V
Repetitive peak reverse voltage VRRM
30
V
Peak forward
Single
IFM
300
mA
current
Series*2
200
Average forward Single
IF(AV)
100
mA
current
Series*2
70
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
EIAJ : SC-70
Flat S-Mini Type Package(3-pin)
Marking Symbol: M4A
Internal Connection
Non-repetitive peak forward
IFSM
1
A
surge current*1
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
*2 : Value per chip
I Electrical Characteristics Ta = 25°C
1
3
2
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
IR
VR = 30 V
VF
IF = 100 mA
Ct
VR = 0 V, f = 1 MHz
15
µA
0.55
V
20
pF
Reverse recovery time*
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
2
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
ɹ 2. Rated input/output frequency: 250 MHz
3. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr
tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
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