MA3Z792D Datasheet, PDF (1/2 Pages) –

Schottky Barrier Diodes (SBD)
MA3Z792D
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
0.425
2.1 ± 0.1
1.25 ± 0.1
Unit : mm
0.425
I Features
• Two MA3Z792s diodes (anode common) are contained in the S-
mini type 3-pin package
• Allowing to rectify under (I_F(AV) = 100 mA) condition
• Optimum for high-frequency rectification because of its short
reverse recovery time (t_rr)
• Low V_F (forward rise voltage), with high rectification efficiency
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V_R
30
V
Repetitive peak reverse voltage V_RRM
30
V
Peak forward
Single
I_FM
300
mA
current
Double^*2
200
Average forward ^Single
I_F(AV)
100
mA
current
Double^*2
70
Non-repetitive peak forward
I_FSM
1
A
surge current^*1
Junction temperature
T_j
125
°C
Storage temperature
T_stg
−55 to +125
°C
Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
*2 : Value per chip
1
3
2
1 : Cathode 1
2 : Cathode 2
3 : Anode 1, 2
Flat S-Mini Type Package (3-pin)
Marking Symbol: M3Y
Internal Connection
1
3
2
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time^*
I_R
V_R = 30 V
V_F
I_F = 100 mA
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = I_R = 100 mA
I_rr = 10 mA, R_L = 100 Ω
15
µA
0.55
V
20
pF
2
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
ɹ 2. Rated input/output frequency: 250 MHz
3. * : t_rr measuring circuit
Bias Application Unit N-50BU
Input Pulse
Output Pulse
t_r
t_p
10%
t
I_F
t_rr
t
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 10 mA
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
1