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| MA3XD15 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type | |||
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Schottky Barrier Diodes (SBD)
MA3XD15
Silicon epitaxial planar type
For rectification
For protection against reverse current
0.65 ± 0.15
+ 0.2
2.8 â 0.3
+ 0.25
1.5 â 0.05
Unit : mm
0.65 ± 0.15
I Features
⢠Mini type 3-pin package
⢠Low VF or Low IR type: VF < 0.45 V, IR < 100 µA
⢠Allowing to rectify under (IF(AV) = 1 A) condition
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
VR
20
V
Repetitive peak reverse voltage VRRM
25
V
Non-repetitive peak forward
IFSM
3
A
surge current*1
Average forward current*2
IF(AV)
1.0
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
â55 to +125
°C
Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
*2 : With a alumina PC board
0.1 to 0.3
0.4 ± 0.2
1 : Anode
2 : NC
3 : Cathode
Mini Type Package (3-pin)
Marking Symbol: M5N
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
IR
VR = 20 V
VF
IF = 1.0 A
Ct
VR = 0 V, f = 1 MHz
100 µA
0.45
V
120
pF
Note) Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
1
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