MA3XD11 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA3XD11
Silicon epitaxial planar type
For high-frequency rectification
I Features
• Sealed in the Mini type 3-pin package
• Allowing to rectify under (I_F(AV) = 1 A) condition
• Low forward rise voltage V_F
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
V_R
20
V
Repetitive peak reverse voltage
V_RRM
25
V
Average forward current^*1
I_F(AV)
1.0
A
Non-repetitive peak forward
I_FSM
3
A
surge current^*2
Junction temperature
T_j
125
°C
Storage temperature
T_stg
−55 to +125
°C
Note) *1 : With a alumina PC board
*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
0.65 ± 0.15
2.8
+
−
0.2
0.3
1.5
+
−
0.25
0.05
Unit : mm
0.65 ± 0.15
1
3
2
0.1 to 0.3
0.4 ± 0.2
1 : Anode
2 : NC
3 : Cathode
Mini Type Package (3-pin)
Marking Symbol: M6K
Internal Connection
1
3
2
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
I_R
V_R = 20 V
200 µA
Forward voltage (DC)
Terminal capacitance
V_F
I_F = 1.0 A
C_t
V_R = 0 V, f = 1 MHz
0.45 V
180
pF
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of
a human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 400 MHz
1