MA3X791 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA3X791
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
0.65 ± 0.15
+ 0.2
2.8 − 0.3
+ 0.25
1.5 − 0.05
Unit : mm
0.65 ± 0.15
I Features
• Two MA3X786s are contained in one package (series connection)
• Allowing to rectify under (I_F(AV) = 100 mA) condition
• Optimum for high-frequency rectification because of its short re-
verse recovery time (t_rr)
• Low V_F (forward rise voltage), with high rectification efficiency
1
3
2
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V_R
30
V
Repetitive peak reverse voltage V_RRM
30
V
Peak forward
Single
I_FM
300
mA
current
Series^*2ɹ
200
Average forward Single
I_F(AV)
100
mA
current
Series^*2ɹ
70
Non-repetitive peak forward
I_FSM
1
A
surge current^*1
Junction temperature
T_j
125
°C
Storage temperature
T_stg
−55 to +125
°C
Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
*2 : Value per chip
0.1 to 0.3
0.4 ± 0.2
1 : Anode 1
2 : Cathode 2
3 : Cathode 1 JEDEC : TO-236
Anode 2
EIAJ : SC-59
Mini Type Package (3-pin)
Marking Symbol: M4A
Internal Connection
1
3
2
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Reverse current (DC)
I_R
Forward voltage (DC)
V_F
Terminal capacitance
C_t
Reverse recovery time^*
t_rr
Conditions
V_R = 30 V
I_F = 100 mA
V_R = 0 V, f = 1 MHz
I_F = I_R = 100 mA
I_rr = 10 mA, R_L = 100 Ω
Min Typ Max Unit
15
µA
0.55
V
20
pF
2
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
ɹ 2. Rated input/output frequency: 250 MHz
3. * : t_rr measuring circuit
Bias Application Unit N-50BU
Input Pulse
Output Pulse
t_r
t_p
10%
t
I_F
t_rr
t
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 10 mA
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
1