MA3X740 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA3X740
Silicon epitaxial planar type
For super high speed switching circuit
For small current rectification
0.65 ± 0.15
+ 0.2
2.8 − 0.3
+ 0.25
1.5 − 0.05
Unit : mm
0.65 ± 0.15
I Features
• Two MA3X721s are contained in one package (series connec-
tion)
• Allowing to rectify under (I_F(AV) = 200 mA) condition
(single diode value)
1
3
2
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V_R
30
V
Repetitive peak reverse voltage V_RRM
30
V
Average forward ^Single
I_F(AV)
200
mA
current
Double^*1ɹ
130
Peak forward
Single
I_FM
300
mA
current
Double^*1ɹ
220
Non-repetitive peak Single
I_FSM
1
A
forward surge current^*2 _Double^*1_ɹ
0.7
0.1 to 0.3
0.4 ± 0.2
1 : Anode 1
2 : Cathode 2
3 : Cathode 1 JEDEC : TO-236
Anode 2
EIAJ : SC-59
Mini Type Package (3-pin)
Marking Symbol: M3C
Internal Connection
Junction temperature
T_j
150
°C
Storage temperature
T_stg
−55 to +150
°C
Note) *1 : Value per chip
*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
I Electrical Characteristics T_a = 25°C
1
3
2
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time^*
I_R
V_R = 30 V
V_F
I_F = 200 mA
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = I_R = 100 mA
I_rr = 10 mA, R_L = 100 Ω
50
µA
0.55
V
30
pF
3
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
ɹ 2. Rated input/output frequency: 1 000 MHz
3. * : t_rr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 10 mA
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
1