MA3X730 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA3X730
Silicon epitaxial planar type
For UHF mixer
I Features
• Two MA2X707s are contained in the (Mini (3-pin) type)
• Large conversion gain (GC)
• Small forward voltage V_F
• Optimum for the UHF band mixer
0.65 ± 0.15
+ 0.2
2.8 − 0.3
+ 0.25
1.5 − 0.05
Unit : mm
0.65 ± 0.15
1
3
2
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Forward voltage (DC)
Reverse voltage (DC)
Junction temperature
Storage temperature
V_F
0.5
V
V_R
5
V
T_j
125
°C
T_stg
−55 to +125
°C
0.1 to 0.3
0.4 ± 0.2
1 : Anode 1
2 : Cathode 2
3 : Cathode 1 JEDEC : TO-236
Anode 2
EIAJ : SC-59
Mini Type Package (3-pin)
Marking Symbol: M2X
Internal Connection
1
3
2
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward current (DC)
Reverse current (DC)
Forward voltage (DC)
Reverse breakdown voltage (DC)
Terminal capacitance
Conversion gain^*1,2
I_F
I_R
V_F
V_(BR)R
C_t
GC
V_F = 0.5 V
V_R = 5 V
I_F = 2 mA
I_R = 1 mA
V_R = 0.5 V, f = 1 MHz
R_F = 890 MHz, L_O = 935 MHz
I_F = 45 MHz
35
100 mA
35
µA
0.25
V
5
V
0.65 0.85 1.05 pF
−7 −5
dB
Static breakdown strength
C = 100 pF, Breakdown judgment
100 200
V
point I_R ≥ 35 µA
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
ɹ 2. Rated input/output frequency: 935 MHz
3. Noise index is 8.5 dB
4. Each characteristic is a standard for individual diodes
5. *1 : Judgement is to be made per each chip lot. Sampling of LTPD = 20% and n = 11 is guaranteed.
*2 : Set min. GC = −7 dB. Out-spec products, if any, this specification would be reviewed
1