MA3X727_13 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type For super high speed switching For small current rectification

This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3X727 (MA727)
Silicon epitaxial planar type
Unit: mm
For super high speed switching
For small current rectification
■ Features
/ _{• Reverse voltage VR = 50 V is guaranteed}
• Forward current (Average) I_F(AV) = 200 mA rectification is
e _possible
nc ^d le ^{stage. ■ Absolute Maximum Ratings T}a ^{= 25°C}
yc _Parameter
Symbol Rating
Unit
a ^e lifec Reverse voltage
V_R
50
V
ct _{Repetitive peak reverse voltage}
V_RRM
50
V
n ^u _{rodu Peak forward current}
I_FM
300
mA
P _{Forward current (Average)}
I_F(AV)
200
mA
te ^{tin four Non-repetitive peak forward}
I_FSM
1
A
g ^{e . surge current *}
win ^{typ tion Junction temperature}
in ^{n follo ance pe ed rma Storage temperature}
T_j
150
°C
T_stg
−55 to +150
°C
a ^{o ludes inten e ty typ info n/ Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)}
0.40^{+–00..0150}
3
1
2
(0.95) (0.95)
1.9±0.1
2.90^{+–00..0250}
10˚
0.16^{+–00..0160}
EIAJ: SC-59
1: Anode
2: N.C.
3: Cathode
Mini3-G1 Package
Marking Symbol: M1Z
Internal Connection
3
c _ed ^inc _ed ^ma _tenanc ^{tinued type latest o.jp/e 1}
2
M _is tinu ^{lan ain iscon ued out nic.c ■ Electrical Characteristics Ta = 25°C ± 3°C}
on ^{p m d d ntin ab aso Parameter}
Symbol
Conditions
Min Typ Max Unit
isc ^{ne co RL an Forward voltage}
e/D ^{pla dis ing U icon.p} _{Reverse current}
D_{tenanc follow .sem Terminal capacitance}
Main e ^{visit ://www Reverse recovery time *}
V_F1
I_F = 30 mA
V_F2
I_F = 200 mA
I_R
V_R = 50 V
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = I_R = 100 mA
I_rr = 10 mA, R_L = 100 Ω
0.36
V
0.55
V
200 µA
30
pF
3.0
ns
as ttp ^{Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.}
le ^{h 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body}
P _{and the leakage of current from the operating equipment.}
ɹ 3. Absolute frequency of input and output is 1 GHz.
4. _*: t_rr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
t_r
t_p
10%
t
I_F
t_rr
t
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 10 mA
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
R_i = 50 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SKH00082CED
1