MA3X727 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA3X727 (MA727)
Silicon epitaxial planar type
For super high speed switching
For small current rectification
s Features
• V_R = 50 V is guaranteed
• I_F(AV) = 200 mA rectification is possible
• Mini type 3-pin package
s Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
V_R
50
V
Repetitive peak reverse-voltage
V_RRM
50
V
Peak forward current
I_FM
300
mA
Average forward current
I_F(AV)
200
mA
Non-repetitive peak forward-
I_FSM
1
A
surge-current ^*
Junction temperature
Storage temperature
T_j
150
°C
T_stg
−55 to +150
°C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
0.40^{+–00..0150}
3
Unit: mm
0.16^{+–00..0160}
1
2
(0.95) (0.95)
1.9±0.1
2.90^{+–00..0250}
10˚
1: Anode
2: N.C.
3: Cathode
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: M1Z
Internal Connection
3
1
2
s Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time ^*
I_R
V_R = 50 V
V_F1
I_F = 30 mA
V_F2
I_F = 200 mA
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = I_R = 100 mA
I_rr = 10 mA, R_L = 100 Ω
200 µA
0.36
V
0.55
V
30
pF
3.0
ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
ɹ 2. Rated input/output frequency: 1 GHz 3. *: t_rr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
t_r
t_p
10%
t
I_F
t_rr
t
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 10 mA
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
R_i = 50 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2002
SKH00082BED
1