MA3X717 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Schottky Barrier Diodes (SBD)

Schottky Barrier Diodes (SBD)
MA3X717 (MA717)
Silicon epitaxial planar type
For switching
For wave detection
s Features
• Low forward voltage V_F, optimum for low voltage rectification
• Low V_F type of MA3X704A (MA704A)
• Optimum for high frequency rectification because of its short
reverse recovery time (t_rr)
• Mini type 3-pin package
s Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
Peak forward current
Forward current (DC)
Junction temperature
Storage temperature
V_R
30
V
I_FM
150
mA
I_F
30
mA
T_j
125
°C
T_stg
−55 to +125
°C
0.40^{+–00..0150}
3
Unit: mm
0.16^{+–00..0160}
1
2
(0.95) (0.95)
1.9±0.1
2.90^{+–00..0250}
10˚
1: Anode
2: N.C.
3: Cathode
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: M2M
Internal Connection
3
s Electrical Characteristics T_a = 25°C
1
2
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time ^*
Detection efficiency
I_R
V_R = 30 V
V_F1
I_F = 1 mA
V_F2
I_F = 30 mA
C_t
V_R = 1 V, f = 1 MHz
t_rr
I_F = I_R = 10 mA
I_rr = 1 mA, R_L = 100 Ω
η
V_in = 3 V_(peak) , f = 30 MHz
R_L = 3.9 kΩ, C_L = 10 pF
30
µA
0.3
V
1.0
1.5
pF
1.0
ns
65
%
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz 3. _*: t_rr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
Output Pulse
I_F
t_rr
t
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 1 mA
I_F = 10 mA
I_R = 10 mA
R_L = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2002
SKH00077BED
1