MA3X704D Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA3X704D, MA3X704E
Silicon epitaxial planar type
For switching circuits
For wave detection circuit
0.65 ± 0.15
+ 0.2
2.8 − 0.3
+ 0.25
1.5 − 0.05
Unit : mm
0.65 ± 0.15
I Features
• Two MA3X704As are contained in one package
• Low forward rise voltage (V_F) and satisfactory wave detection
efficiency (η)
• Small tmperature coefficient of forward characteristic
• Extremely low reverse current I_R
1
3
2
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC) MA3X704D/E
V_R
30
V
Peak forward
Single
I_FM
150
mA
current
Double^*
110
Forward current Single
I_F
(DC)
Double^*
30
mA
20
Junction temperature
Storage temperature
T_j
125
°C
T_stg
−55 to +125
°C
Note) * : Value per chip
0.1 to 0.3
0.4 ± 0.2
MA3X704D MA3X704E
JEDEC : TO-236
1 Cathode Anode
EIAJ : SC-59
2 Cathode Anode
Mini Type Package (3pin) _{3 Anode}
Cathode
Marking Symbol
• MA3X704D : M2P • MA3X704E : M2R
Internal Connection
1
1
3
3
2
2
I Electrical Characteristics T_a = 25°C
D
E
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time^*
I_R
V_R = 30 V
V_F1
I_F = 1 mA
V_F2
I_F = 30 mA
C_t
V_R = 1 V, f = 1 MHz
t_rr
I_F = I_R = 10 mA
I_rr = 1 mA, R_L = 100 Ω
1
µA
0.4
V
1.0
V
1.5
pF
1.0
ns
Detection efficiency
η
V_in = 3 V_(peak), f = 30 MHz
R_L = 3.9 kΩ, C_L = 10 pF
65
%
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
ɹ 2. Rated input/output frequency: 2 000 MHz
3. * : t_rr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 1 mA
I_F = 10 mA
I_R = 10 mA
R_L = 100 Ω
1