MA3X704 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA3X704, MA3X704A
Silicon epitaxial planar type
For switching circuits
For wave detection circuit
I Features
• Low forward rise voltage (V_F) and satisfactory wave detection
efficiency (η)
• Small temperature coefficient of forward characteristic
• Extremely low reverse current I_R
0.65 ± 0.15
+ 0.2
2.8 − 0.3
+ 0.25
1.5 − 0.05
Unit : mm
0.65 ± 0.15
1
3
2
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
0.1 to 0.3
0.4 ± 0.2
Reverse voltage ^MA3X704
V_R
15
V
(DC)
MA3X704A
30
Peak reverse
MA3X704
V_RM
15
V
voltage
MA3X704A
30
Peak forward current
Forward current (DC)
Junction temperature
Storage temperature
I_FM
150
mA
I_F
30
mA
T_j
125
°C
T_stg
−55 to +125
°C
1 : Anode
2 : NC
JEDEC : TO-236
3 : Cathode EIAJ : SC-59
Mini Type Package (3-pin)
Marking Symbol
• MA3X704 : M1K • MA3X704A : M1L
Internal Connection
1
3
2
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC) MA3X704
I_R
MA3X704A
Forward voltage (DC)
V_F1
V_F2
Terminal capacitance
C_t
Reverse recovery time^*
t_rr
V_R = 15 V
V_R = 30 V
I_F = 1 mA
I_F = 30 mA
V_R = 1 V, f = 1 MHz
I_F = I_R = 10 mA
I_rr = 1 mA, R_L = 100 Ω
200 nA
300
0.4
V
1
V
1.5
pF
1
ns
Detection efficiency
η
V_in = 3 V_(peak), f = 30 MHz
R_L = 3.9 kΩ, C_L = 10 pF
65
%
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
ɹ 2. Rated input/output frequency: 2 000 MHz
3. * : t_rr measuring instrument
Bias Application Unit N-50BU
Input Pulse
t_r
t_p
t
10%
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 1 mA
I_F = 10 mA
I_R = 10 mA
R_L = 100 Ω
1