MA3X701 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA3X701
Silicon epitaxial planar type
For high-frequency rectification
0.65 ± 0.15
+ 0.2
2.8 − 0.3
+ 0.25
1.5 − 0.05
Unit : mm
0.65 ± 0.15
I Features
• Mini type 3-pin package
• Allowing to rectify under (I_F(AV) = 700 mA) condition
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V_R
30
V
Repetitive peak reverse voltage V_RRM
30
V
Average forward current
I_F(AV)
700
mA
Non-repetitive peak forward
I_FSM
5
A
surge current^*
Junction temperature
Storage temperature
T_j
125
°C
T_stg
−55 to +150
°C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
1
3
2
0.1 to 0.3
0.4 ± 0.2
1 : Anode
2 : NC
JEDEC : TO-236
3 : Cathode EIAJ : SC-59
Mini Type Package (3-pin)
Marking Symbol: M4P
Internal Connection
1
3
2
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time^*2
Thermal resistance (1)
Thermal resistance (2)^*1
I_R
V_F
C_t
t_rr
R_th(j-a)(1)
R_th(j-a)(2)
V_R = 30 V
I_Z = 700 mA
V_R = 0 V, f = 1 MHz
I_F = I_R = 100 mA
I_rr = 10 mA, R_L = 100 Ω
80
µA
0.55
V
120
pF
7.5
ns
420
°C/W
330
°C/W
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
ɹ 2. Rated input/output frequency: 400 MHz
3. *1 : Obtained by fixing the element to the printed-circuit board (copper foil area 0.8 mm × 20 mm)
*2 : t_rr measuring circuit
Bias Application Unit N-50BU
Input Pulse
Output Pulse
t_r
t_p
10%
t
I_F
t_rr
t
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 10 mA
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
1