MA3X551 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

PIN Diodes
MA3X551
Silicon epitaxial planar type
For UHF and SHF bands AGC
I Features
• Small diode capacitance C_D
• Large variable range of forward dynamic resistance r_f
• Mini type package, allowing downsizing of equipment and auto-
matic insertion through the taping package and magazine package
0.65 ± 0.15
+ 0.2
2.8 − 0.3
+ 0.25
1.5 − 0.05
Unit : mm
0.65 ± 0.15
1
3
2
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Power dissipation
Operating ambient temperature
Storage temperature
V_R
40
V
V_RM
45
V
I_F
100
mA
P_D
150
mW
T_opr
−25 to +85
°C
T_stg
−55 to +150
°C
0.1 to 0.3
0.4 ± 0.2
1 : Anode
2 : NC
3 : Cathode
Mini Type Package (3-pin)
Marking Symbol: MY
Internal Connection
1
3
2
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Diode capacitance
Forward dynamic resistance^*
I_R
V_R = 40 V
V_F
I_F = 100 mA
C_D
V_R = 15 V, f = 1 MHz
r_f1
I_F = 10 µA, f = 100 MHz
r_f2
I_F = 10 mA, f = 100 MHz
100 nA
1.05 1.2
V
0.3 0.5
pF
1
2
kΩ
6
10
Ω
Note) 1ɽRated input/output frequency: 100 MHz
ɹ 2ɽ* : r_f measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
1