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| MA3X200F Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type | |||
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Switching Diodes
MA3X200F
Silicon epitaxial planar type
For switching circuits
0.65 ± 0.15
+ 0.2
2.8 â 0.3
+ 0.25
1.5 â 0.05
Unit : mm
0.65 ± 0.15
I Features
⢠Two elements contained in one package, allowing high-density
mounting
⢠Soft recovery characteristic (Trr: 100 ns)
⢠Small terminal capacitance, Ct
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
VR
80
V
Peak reverse voltage
VRM
80
V
Forward voltage Single
IF
100
mA
(DC)
Series
75
Peak forward
Single
IFM
225
mA
current
Series
170
Non-repetitive peak Single
IFSM
500
mA
forward surge current* Series
325
Junction temperature
Storage temperature
Tj
150
°C
Tstg
â55 to +150
°C
Note) * : t = 1 s
1
3
2
0.1 to 0.3
0.4 ± 0.2
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
Mini Type Package (3-pin)
Marking Symbol: M5M
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time*
IR1
VR = 75 V
IR2
VR = 5 V, Ta = 85°C
VF
IF = 100 mA
VR
IR = 100 µA
Ct
VR = 0 V, f = 1 MHz
trr
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 â¦
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
tr
tp
t
10%
A
Pulse Generator
(PG-10N)
Rs = 50 â¦
W.F.Analyzer
(SAS-8130)
Ri = 50 â¦
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Min Typ Max
10
20
1.2
80
2.5
100
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 â¦
Unit
nA
nA
V
V
pF
ns
1
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