MA3X199 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Switching Diodes
MA3X199
Silicon epitaxial planar type
For high voltage switching circuit
0.65 ± 0.15
+ 0.2
2.8 − 0.3
+ 0.25
1.5 − 0.05
Unit : mm
0.65 ± 0.15
I Features
• High breakdown voltage: V_R = 200 V
• Short reverse recovery time t_rr
• Small package, allowing automatic mounting
1
3
2
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V_R
200
V
Repetitive peak reverse voltage V_RRM
250
V
Average forward current
I_F(AV)
100
mA
Repetitive peak forward current I_FRM
225
mA
Non-repetitive peak forward
I_FSM
500
mA
surge current^*
Junction temperature
Storage temperature
T_j
150
°C
T_stg
−55 to +150
°C
Note) * : t = 1 s
0.1 to 0.3
0.4 ± 0.2
1 : Anode
2 : NC
JEDEC : TO-236
3 : Cathode EIAJ : SC-59
Mini Type Package (3-pin)
Marking Symbol: M3A
Internal Connection
1
3
2
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Reverse current (DC)
I_R
Forward voltage (DC)
V_F
Terminal capacitance
C_t
Reverse recovery time^*
t_rr
Note) 1. Rated input/output frequency: 20 MHz
2. * : t_rr measuring circuit
Conditions
V_R = 200 V
I_F = 100 mA
V_R = 0 V, f = 1 MHz
I_F = I_R = 10 mA
I_rr = 1 mA, R_L = 100 Ω
Min Typ Max Unit
1
µA
1.2
V
3
pF
60
ns
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 1mA
I_F = 10 mA
I_R = 10 mA
R_L = 100 Ω
1