MA3X198 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Switching Diodes
MA3X198
Silicon epitaxial planar type
For general purpose
0.65 ± 0.15
+ 0.2
2.8 − 0.3
+ 0.25
1.5 − 0.05
Unit : mm
0.65 ± 0.15
I Features
• Two elements contained in one package, allowing high-density
mounting
• Soft recovery characteristic (t_rr = 100 ns)
• Can be connected in series
1
3
2
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V_R
40
V
Repetitive peak reverse voltage V_RRM
40
V
Average forward ^Single
I_F(AV)
100
mA
current
Series
75
Repetitive peak
Single
I_FRM
225
mA
forward current
Series
170
Non-repetitive peak Single
I_FSM
500
mA
forward surge current^* _Series
325
Junction temperature
Storage temperature
T_j
150
°C
T_stg
−55 to +150
°C
Note) * : t = 1 s
0.1 to 0.3
0.4 ± 0.2
1 : Anode 1
2 : Cathode 2
3 : Cathode 1 JEDEC : TO-236
Anode 2
EIAJ : SC-59A
Mini Type Package (3-pin)
Marking Symbol: M2F
Internal Connection
1
3
2
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Reverse current (DC)
I_R
Forward voltage (DC)
V_F1
V_F2
Terminal capacitance
C_t
Reverse recovery time^*
t_rr
Note) 1. Rated input/output frequency: 100 MHz
2. * : t_rr measuring circuit
Conditions
V_R = 40 V
I_F = 100 µA
I_R = 100 mA
V_R = 6 V, f = 1 MHz
I_F = 10 mA, V_R = 6 V
I_rr = 0.1 · I_R, R_L = 100 Ω
Min Typ Max Unit
10
nA
0.65
0.72
V
1.2
V
1
2
pF
100
ns
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 0.1 · I_R
I_F = 10 mA
V_R = 6 V
R_L = 100 Ω
1