MA3X158 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Switching Diodes
MA3X158
Silicon epitaxial planar type
For small power rectification and surge absorption
I Features
• High reverse voltage V_R
• Large forward current I_F(AV)
• Small package and allowing automatic mounting
0.65 ± 0.15
+ 0.2
2.8 − 0.3
+ 0.25
1.5 − 0.05
Unit : mm
0.65 ± 0.15
1
3
2
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V_R
200
V
Repetitive peak reverse voltage V_RRM
250
V
Non-repetitive peak forward
V_RSM
300
V
surge voltage
Output current
I_F(AV)
100
mA
Non-repetitive peak forward
I_FSM
500
mA
surge current^*
Junction temperature
Storage temperature
Note) * : t = 1 s
T_j
125
°C
T_stg
−55 to +125
°C
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Reverse current (DC)
I_R
Forward voltage (DC)
V_F
Note) Rated input/output frequency: 3 MHz
Conditions
V_R = 200 V
I_F = 100 mA
0.1 to 0.3
0.4 ± 0.2
1 : Anode
2 : NC
JEDEC : TO-236
3 : Cathode EIAJ : SC-59
Mini Type Package (3-pin)
Marking Symbol: M1C
Internal Connection
1
3
2
Min Typ Max Unit
1.0
µA
1.3
V
1