MA3X100 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Switching Diodes
MA3X100 (MA10100)
Silicon epitaxial planar type
For switching circuits
■ Features
• High breakdown voltage: V_R = 200 V
• Small terminal capacitance
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
V_R
200
V
Repetitive peak reverse voltage V_RRM
250
V
Average forward current
I_F(AV)
100
mA
Repetitive peak forward current I_FRM
225
mA
Non-repetitive peak forward-
I_FSM
500
mA
surge-current ^*
Junction temperature
Storage temperature
T_j
150
°C
T_stg
−55 to +150
°C
Note) _*: t = 1 s
0.3^+–00.1
3
12
(0.65) (0.65)
1.3±0.1
2.0±0.2
5˚
Unit: mm
0.15^{+–00..015}
0.9±0.1
1: Anode
2: N.C.
3: Cathode
SMini3-F1 Package
Marking Symbol: M3A
Internal Connection
3
1
2
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time ^*
I_R
V_R = 200 V
V_F
I_F = 100 mA
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = I_R = 10 mA
I_rr = 1 mA , R_L = 100 Ω
Note) 1. Rated input/output frequency: 20 MHz
2. *: t_rr measuring instrument
Min Typ Max Unit
1.0
µA
1.2
V
3.0
pF
60
ns
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 1 mA
I_F = I_R = 10 mA
R_L = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: July 2002
SKF00063AED
1