MA3X075E Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Band Switching Diodes
MA3X075E
Silicon epitaxial planar type
For band switching
0.65 ± 0.15
+ 0.2
2.8 − 0.3
+ 0.25
1.5 − 0.05
Unit : mm
0.65 ± 0.15
I Features
• Low forward dynamic resistance r_f
• Less voltage dependence of diode capacitance C_D
• Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
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3
2
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Forward current (DC)
Operating ambient temperature^*
Storage temperature
V_R
35
V
I_F
100
mA
T_opr
−25 to +85
°C
T_stg
−55 to +150
°C
Note) * : Maximum ambient temperature during operation
0.1 to 0.3
0.4 ± 0.2
1 : Anode 1
2 : Anode 2
JEDEC : TO-236
3 : Cathode 1, 2 EIAJ : SC-59A
Mini Type Package (3-pin)
Marking Symbol: M1Y
Internal Connection
1
3
2
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Diode capacitance
Forward dynamic resistance^*
I_R
V_R = 33 V
V_F
I_F = 100 mA
C_D
V_R = 6 V, f = 1 MHz
r_f
I_F = 2 mA, f = 100 MHz
0.01 100 nA
0.92 1
V
0.9 1.2
pF
0.65 0.85
Ω
Note) 1ɽEach characteristic is a standard for individual diodes
2ɽRated input/output frequency: 100 MHz
ɹ 3. * : r_f measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
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