MA3X028 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type variable resistor

Varistors
MA3X028 Series (MA28 Series)
Silicon epitaxial planar type
For reduced voltage and temperature compensation
0.40^{+–00..0150}
3
Unit: mm
0.16^{+–00..0160}
■ Features
• Extremely small reverse current I_R
• High reliability with planar structure
• Wide forward voltage V_F range
1
2
(0.95) (0.95)
1.9±0.1
2.90^{+–00..0250}
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
V_R
6
V
Peak forward MA3X0280A/B
I_FM
150
mA
current
MA3X028WA/WB
100
MA3X028TA/TB
70
Power dissipation
Junction temperature
Storage temperature
P_D
150
mW
T_j
125
°C
T_stg
−55 to +125
°C
■ Electrical Characteristics T_a = 25°C ± 3°C ^*1
Parameter
Symbol
Conditions
Forward voltage MA3X028WA/WB V_F1
MA3X028TA/TB
I_F = 10 µA
Forward voltage MA3X0280A
MA3X0280B
V_F2
I_F = 1.5 mA
MA3X028WA
MA3X028WB
I_F = 3 mA
MA3X028TA
MA3X028TB
Reverse current
Temperature MA3X0280A/B
coefficient of MA3X028WA/B
forward voltage ^*2 _MA3X028TA/B
I_R
−∆V_F/∆T
V_R = 6 V
I_F = 3 mA
10˚
EIAJ: SC-59
1: Anode
2: N.C.
3: Cathode
Mini3-G1 Package
Marking Symbol
• MA3X0280A : MD
• MA3X0280B : ME
• MA3X028WA : MF
• MA3X028WB : MK
• MA3X028TA : ML
• MA3X028TB : MM
Min Typ Max Unit
0.77
V
1.15
0.56
0.61
V
0.59
0.64
1.18
1.28
1.26
1.36
1.76
1.92
1.88
2.04
1.0
µA
2.0
mV/°C
4.6
6.5
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz
3. _*1: The temperature must be controlled 25°C for V_F measurement. V_F value measured at other temprature must be adjusted
to V_F (25°C).
*2: ^Tj ^{= 25°C to 150°C}
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004
SKB00003CED
1