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| MA3V175E Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type | |||
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Switching Diodes
MA3V175E, MA3V176E
Silicon epitaxial planar type
For switching circuits
4.0 ± 0.2
Unit : mm
I Features
⢠Short reverse recovery time trr
⢠Small terminal capacitance, Ct
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage MA3V175E VR
40
V
(DC)
MA3V176E
80
Peak reverse
MA3V175E VRM
40
V
voltage
MA3V176E
80
Forward current Single
IF
(DC)
Double
100
mA
150
Peak forward
Single
IFM
225
mA
current
Double
340
Non-repetitive peak Single
IFSM
500
mA
forward surge current* Double
750
Junction temperature
Storage temperature
Tj
150
°C
Tstg
â55 to +150
°C
Note) * : t = 1 s
marking
123
1.27 1.27
2.54 ± 0.15
1 : Anode
2 : Cathode
3 : Anode
New S-Type Package
Internal Connection
123
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC) MA3V175E
IR
MA3V176E
Forward voltage (DC)
VF
Reverse voltage (DC) MA3V175E VR
MA3V176E
Terminal capacitance
Ct
Reverse recovery time*
trr
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
DUT
Conditions
VR = 35 V
VR = 75 V
IF = 100 mA
IR = 100 µA
VR = 0 V, f = 1 MHz
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100â¦
Input Pulse
tr tP
IF
Rs = 50 â¦
V = VR + IR·RS
Sampling
Oscilloscope
Ri = 50 â¦
10%
90%
tp = 100 ns
tr = 0.6 ns
δ = 0.05
Min Typ Max Unit
0.1
µA
0.1
1.2
V
40
V
80
4
pF
3
ns
Output Pulse
trr
0 IF
t
Irr = 0.1·IR
IF = 10 mA
VR = 6 V
RL = 100 â¦
1
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