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MA3U749 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type (cathode common)
Schottky Barrier Diodes (SBD)
MA3U749
Silicon epitaxial planar type (cathode common)
For switching power supply
I Features
• Surface mounting type small U-type package
• Low forward rise voltage VF
• Cathode common dual type
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
40
V
Average forward current
IF(AV)
5
mA
Non-repetitive peak forward
IFSM
40
A
surge current*
Junction temperature
Storage temperature
Tj
−40 to +125
°C
Tstg
−40 to +125
°C
Note) * : Half sine-wave: 10 ms/cycle
6.5 ± 0.1
5.3 ± 0.1
4.35 ± 0.1
Unit : mm
2.3 ± 0.1
0.5 ± 0.1
0.93 ± 0.1
1.0 ± 0.1
0.1 ± 0.05
0.5 ± 0.1
0.75 ± 0.1
2.3 ± 0.1
4.6 ± 0.1
1
2
3
1 : Anode
2 : Cathode
(Common)
3 : Anode
U-Type Package
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Reverse current (DC)
IR
VR = 40 V, TC = 25°C
Forward voltage (DC)
VF
IF = 2.5 A, TC = 25°C
Thermal resistance*
Rth(j-c)
Between junction and case
Note) 1. Rated input/output frequency: 1 000 MHz
2. * : TC = 25°C
Min Typ Max Unit
1
mA
0.55
V
12.5 °C/W
1
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