MA3U689 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon planar type

Fast Recovery Diodes (FRD)
MA3U689
Silicon planar type
For high-frequency rectification
I Features
• Small U-type package for surface mounting
• Low-loss type with fast reverse recovery time t_rr
• Single type
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage V_RRM
200
V
Non-repetitive peak reverse
V_RSM
200
V
surge voltage
Average forward current^*1
I_F(AV)
2.5
A
Non-repetitive peak forward
I_FSM
40
A
surge current^*2
Junction temperature
T_j
−40 to +150
°C
Storage temperature
T_stg
−40 to +150
°C
Note) *1 : T_C = 25°C
*2 : Half sine-wave; 10 ms/cycle
6.5 ± 0.1
5.3 ± 0.1
4.35 ± 0.1
Unit : mm
2.3 ± 0.1
0.5 ± 0.1
0.93 ± 0.1
1.0 ± 0.1
0.1 ± 0.05
0.5 ± 0.1
0.75 ± 0.1
2.3 ± 0.1
4.6 ± 0.1
1
2
3
1 : N.C.
2 : Cathode
3 : Anode
U-Type Package
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Repetitive peak reverse current
Forward voltage (DC)
Reverse recovery time^*2
Thermal resistance^*1
I_RRM1
I_RRM2
V_F
t_rr
R_th(j-c)
V_RRM = 200 V, T_C = 25°C
V_RRM = 200 V, T_j = 150°C
I_F = 2.5 A, T_C = 25°C
I_F = 1 A, I_R = 1 A
Direct current (between junction and case)
20
µA
2
mA
0.98
V
40
ns
12.5 °C/W
Note) 1. Rated input/output frequency: 10 MHz
2. *1 : T_C = 25°C
*2 : t_rr measuring circuit
50 Ω
50 Ω
D.U.T
5.5 Ω
t_rr
I_F
I_R
0.1 × I_R
1