MA3SE02 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Schottky Barrier Diodes (SBD)

Schottky Barrier Diodes (SBD)
MA3SE02
Silicon epitaxial planar type
For cellular phone
I Features
• High-frequency wave detection is possible
• Low forward voltage V_F
• Small terminal capacitance C_t
• SS-Mini type 3-pin package
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
V_R
20
V
Peak reverse voltage
V_RM
20
V
Forward current (DC) Single
I_F
35
mA
Seriesɹ
25
Peak forward current Single
I_FM
100
mA
Seriesɹ
70
Junction temperature
Storage temperature
T_j
125
°C
T_stg
−55 to +125
°C
0.28±0.05
3
(0.51)
12
0.28±0.05
(0.51)
(0.80) (0.80)
1.60^{+–00..0035}
3°
Unit: mm
0.12^{+–00..0025}
0.60^{+–00..0035}
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
EIAJ : SC-89
SSMini3-F2 Package
Marking Symbol: M6B
Internal Connection
3
1
2
I Absolute Maximum Ratings T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Forword dynamic resistance
I_R
V_R = 15 V
V_F1
I_F = 1 mA
V_F2
I_F = 35 mA
C_t
V_R = 0 V, f = 1 MHz
r_f
I_F = 5 mA
200 nA
0.40
V
1.0
1.2
pF
9
Ω
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
Publication date: August 2001
SKH00067AED
1