MA3S795E Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA3S795E
Silicon epitaxial planar type
For switching circuits
1.60 ± 0.1
0.80
0.80 ± 0.05
Unit : mm
I Features
• Extra-small (SS-mini type) package, allowing high-density mount-
ing
• Optimum for low voltage rectification because of its low V_F (V_F =
0.3 V or less at I_F = 1 mA)
• Optimum for high-frequency rectification because of its short
reverse recovery time (t_rr)
1
3
2
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V_R
30
V
For switching circuits
V_RM
30
V
Peak forward
Single
I_FM
150
mA
current
Double^*ɹ
110
Forward current ^Single
I_F
(DC)
Double*ɹ
30
mA
20
Junction temperature
Storage temperature
Note) * : Value per chip
T_j
125
°C
T_stg
−55 to +125
°C
0.44 0.44
+ 0.05
0.88 − 0.03
1 : Anode 1
2 : Anode 2
3 : Carhode 1
Cathode 2
SS-Mini Type Package (3-pin)
Marking Symbol: M3D
Internal Connection
1
3
2
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time^*
I_R
V_R = 30 V
V_F1
I_F = 1 mA
V_F2
I_F = 30 mA
C_t
V_R = 1 V, f = 1 MHz
t_rr
I_F = I_R = 10 mA
I_rr = 1 mA, R_L = 100 Ω
30
µA
0.3
V
1
V
1.5
pF
1
ns
Detection efficiency
η
V_in = 3 V_(peak), f = 30 MHz
R_L = 3.9 kΩ, C_L = 10 pF
65
%
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
ɹ 2. Rated input/output frequency: 2 000 MHz
3. * : t_rr measuring circuit
Bias Application Unit N-50BU
Input Pulse
Output Pulse
t_r
t_p
10%
t
I_F
t_rr
t
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 1 mA
I_F = 10 mA
I_R = 10 mA
R_L = 100 Ω
1